Q-switched lasers have occupied important roles in industrial applications such as laser marking, engraving, welding, and cutting due to their advantages in high pulse energy. Here, SnS₂-based Q-switched lasers are implemented. Considering that SnS₂ inherits the thickness sensitive optical characteristics of TMD, three kinds of SnS₂ with different thickness are characterized in terms of nonlinearity and used to realize the Q-switched pulses under consistent implementation conditions for comparison tests. According to the results, the influence of thickness variation on the nonlinear performance of saturable absorber, such as modulation depth and absorption intensity, and the influence on the corresponding laser are analyzed. In addition, compared with other traditional saturable absorbers, the advantage of SnS₂ in realizing ultrashort pulses is also noticed. Our work explores the thickness-dependent nonlinear optical properties of SnS₂, and the rules found is of great reference value for the establishment of target lasers.

Probabilistically shaped (PS) pulse amplitude modulation (PAM) is a promising technique for intra-data-center networks due to its superior performance, for which a low-complexity and cost-effective distributed matching method is critical. In this work, we propose an energy-level-assigned method to yield PS-PAM-4 signals with various bit rates based on variable probabilistic distributions. We experimentally demonstrate the proposed method in a 25 Gbaud PS-PAM-4 transmission over a bandwidth of approximately 10 GHz. Compared to a uniform PAM-4 system, the proposed multi-distributed PS-PAM-4 system approaches the hard decision threshold at a wide range of received optical power for different applications.

Recent years have witnessed the exploration of fiber laser technology focused on numerous pivotal optoelectronic applications from laser processing and remote sensing to optical communication. Here, using cobalt oxyfluoride (CoOF) as the nonlinear material, a 156 fs mode-locked fiber laser with strong stability is obtained. The rapid thermal annealing technique is used to fabricate the CoOF, which is subsequently transferred to the tapered region of the microfiber to form the effective pulse modulation device. CoOF interacts with the pulsed laser through the evanescent field to realize the intracavity pulse shaping, and then the stable mode-locked pulse is obtained. The mode-locked operation is maintained with the pulse duration of 156 fs and repetition rate of 49 MHz. In addition, the signal-to-noise ratio is about 90 dB. Those experimental results confirm the attractive nonlinear optical properties of CoOF and lay a foundation for the ultrafast application of low-dimensional transition metal oxides.

Compared with the extensively studied MoS₂ and WS₂, WTe₂ owns a smaller bandgap, which is applicable to a near-infrared system in photodetectors, communications, and ultrafast optics. In this work, the WTe₂ saturable absorber (SA) with the tapered fiber structure is prepared by the magnetron-sputtering technology, which enables the prepared SA to be low in cost and have strong nonlinearity. The modulation depth of the prepared WTe₂ SA is measured as 31.06%. The Q-switched fiber laser operating at 1.5 μm is successfully investigated by incorporating the proposed SA into the prepared ring cavity. To the best of our knowledge, this is the first attempt of WTe₂ in the Q-switched fiber laser at 1.5 μm.

Transition metal dichalcogenides (TMDs) are successfully applied in fiber lasers for their photoelectric properties. However, in previous work, how to improve the modulation depth of TMD-based saturable absorbers (SAs) has been a challenging issue. In this paper, WSe2 and MoSe2 SAs are fabricated with the chemical vapor deposition method. Compared with previous experiments, the modulation depths of WSe2 and MoSe2 SAs with sandwiched structures are effectively increased to 31.25% and 25.69%, respectively. The all-fiber passively Q-switched erbium doped fiber lasers based on WSe2 and MoSe2 SAs are demonstrated. The signal-to-noise ratios of those lasers are measured to be 72 and 57 dB, respectively. Results indicate that the proposed WSe2 and MoSe2 SAs are efficient photonic devices to realize stable fiber lasers.

Materials in the transition metal dichalcogenide family, including WS2, MoS2, WSe2, and MoSe2, etc., have captured a substantial amount of attention due to their remarkable nonlinearities and optoelectronic properties. Compared with WS2 and MoS2, the monolayered MoTe2 owns a smaller direct bandgap of 1.1 eV. It is beneficial for the applications in broadband absorption. In this letter, using the magnetron sputtering technique, MoTe2 is deposited on the surface of the tapered fiber to be assembled into the saturable absorber. We first implement the MoTe2-based Q-switched fiber laser operating at the wavelength of 1559 nm. The minimum pulse duration and signal-to-noise ratio are 677 ns and 63 dB, respectively. Moreover, the output power of 25 mW is impressive compared with previous work. We believe that MoTe2 is a promising 2D material for ultrafast photonic devices in the high-power Q-switched fiber lasers.

Two-dimensional (2D) materials with potential applications in photonic and optoelectronic devices have attracted increasing attention due to their unique structures and captivating properties. However, generation of stable high-energy ultrashort pulses requires further boosting of these materials’ optical properties, such as higher damage threshold and larger modulation depth. Here we investigate a new type of heterostructure material with uniformity by employing the magnetron sputtering technique. Heterostructure materials are synthesized with van der Waals heterostructures consisting of MoS2 and Sb2Te3. The bandgap, carrier mobility, and carrier concentration of the MoS2-Sb2Te3-MoS2 heterostructure materials are calculated theoretically. By using these materials as saturable absorbers (SAs), applications in fiber lasers with Q-switching and mode-locking states are demonstrated experimentally. The modulation depth and damage threshold of SAs are measured to be 64.17% and 14.13J/cm2, respectively. Both theoretical and experimental results indicate that MoS2-Sb2Te3-MoS2 heterostructure materials have large modulation depth, and can resist high power during the generation of ultrashort pulses. The MoS2-Sb2Te3-MoS2 heterostructure materials have the advantages of low cost, high reliability, and suitability for mass production, and provide a promising solution for the development of 2D-material-based devices with desirable electronic and optoelectronic properties.